High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy

被引：5
|
作者：
Ha, S. K. [1 ]
Song, J. D. [1 ]
Han, I. K. [1 ]
Ko, D. Y. [2 ]
Kim, S. Y. [2 ]
Lee, E. H. [3 ]
机构：
[1] Korea Inst Sci & Technol, Nanophoton Res Ctr, Seoul 136791, South Korea
[2] Hanyang Univ, Div Elect & Comp Engn, Seoul 133791, South Korea
[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 59卷 / 05期
关键词：
Quantum dots; Quantum dashes; Laser diodes; DOT LASERS; NM; WAVELENGTH; PERFORMANCE; INAS;
D O I：
10.3938/jkps.59.3089
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the performance of 745-nm laser diodes (LDs) utilizing InP/InGaP quantum structures (quantum dots + quantum dashes) grown by using migration-enhanced epitaxy method. The photoluminescence of the LD structures before the fabrication of the LDs shows two peaks, around 800 nm and 750 nm, attributed to quantum dots and dashes, respectively. The lasing wavelength is thought to the result from quantum dashes instead of ground states of QDs. The pulse optical power of the LD is above 600 mW at room temperature.
引用
收藏
页码：3089 / 3092
页数：4
相关论文
共 36 条
  • [1] Photoluminescence Studies of InP/InGaP Quantum Structures Grown by a Migration Enhanced Molecular Beam Epitaxy
    Cho, Il-Wook
    Ryu, Mee-Yi
    Song, Jin Dong
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2016, 25 (04): : 81 - 84
  • [2] Optical Properties of InP/InGaP Quantum Structures Grown by a Migration Enhanced Epitaxy with Different Growth Cycles
    Oh, Jae Won
    Cho, Il-Wook
    Ryu, Mee-Yi
    Song, Jin Dong
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2015, 24 (03): : 67 - 71
  • [3] Effect of Growth Cycles on the Luminescence Properties of InP/InGaP Quantum Structures Grown Using Migration-Enhanced Epitaxy
    Cho, Il-Wook
    Ryu, Mee-Yi
    Song, Jin Dong
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2019, 28 (05): : 173 - 176
  • [4] Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures
    Cho, Il-Wook
    Ryu, Mee-Yi
    Song, Jin Dong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2017, 70 (08) : 785 - 790
  • [5] Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures
    Il-Wook Cho
    Mee-Yi Ryu
    Jin Dong Song
    Journal of the Korean Physical Society, 2017, 70 : 785 - 790
  • [6] Epitaxy of high-power diode laser structures
    Weyers, M
    Bhattacharya, A
    Bugge, F
    Knauer, A
    HIGH-POWER DIODE LASERS: FUNDAMENTALS, TECHNOLOGY, APPLICATIONS, 2000, 78 : 83 - 120
  • [7] Temperature-dependent carrier dynamics of InP/InGaP quantum structures grown at various growth temperatures using migration-enhanced epitaxy
    Cho, Il-Wook
    Ryu, Mee-Yi
    Song, Jin Dong
    JOURNAL OF LUMINESCENCE, 2020, 223
  • [8] InAs/GaAs Quantum Dots grown by Migration Enhanced Molecular Beam Epitaxy (MEMBE) and the lasing characteristics of Quantum Dot Laser Diode Emitting 1310 nm
    Choi, Won Jun
    Song, Jin Dong
    Kim, Kwang Woong
    Cho, Nam Ki
    Ryu, Sung Pil
    Lim, Ju Young
    Lee, Jung
    2006 THE JOINT INTERNATIONAL CONFERENCE ON OPTICAL INTERNET (COIN) AND NEXT GENERATION NETWORK (NGNCON), 2006, : 493 - 496
  • [9] MULTIPLE QUANTUM BARRIER STRUCTURES AND THEIR APPLICATION TO HIGH-POWER VISIBLE LASER-DIODES WITH STRAINED INGAP ACTIVE LAYERS GROWN BY MOCVD
    KADOIWA, K
    MOTODA, T
    NISHIMURA, T
    ARIMOTO, S
    WATANABE, H
    KAMIZATO, T
    MIZUGUCHI, K
    MUROTANI, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 757 - 762
  • [10] High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices
    Ruder, Steven
    Earles, Tom
    Galstad, Christian
    Klaus, Michael
    Olson, Don
    Mawst, Luke J.
    PHOTONICS, 2022, 9 (07)
1234