Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

被引：0
|
作者：
Mai, Y. [1 ]
Verlaan, V. [1 ]
van der Werf, C. H. M. [1 ]
Houweling, Z. S. [1 ]
Bakker, R. [1 ]
Rath, J. K. [1 ]
Schropp, R. E. I. [1 ]
机构：
[1] Univ Utrecht, Fac Sci, Dept Phys & Astron, SID Phys Devices, NL-3508 TA Utrecht, Netherlands
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期
关键词：
silicon; solar cells; photovoltaics; chemical vapor deposition; Rutherford backscattering; FT-IR measurements;
D O I：
10.1016/j.jnoncrysol.2007.10.057
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si-N, Si-H and N-H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiNx:H with different N/Si ratios. (c) 2008 Published by Elsevier B.V.
引用
收藏
页码：2372 / 2375
页数：4
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