High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

被引：18

作者：

Mueller, R. ^{[1
]}

Gramich, V. ^{[1
]}

Wauro, M. ^{[1
]}

Niemasz, J. ^{[1
]}

Kirste, L. ^{[1
]}

Daumer, V. ^{[1
]}

Janaszek, A. ^{[2
]}

Jurenczyk, J. ^{[2
]}

Rehm, R. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Freiburg, Germany

[2] VIGO Syst, Ozarow Mazowiecki, Poland

来源：

INFRARED PHYSICS & TECHNOLOGY | 2019年 / 96卷

基金：

欧盟地平线“2020”;

关键词：

InAs/GaSb; T2SL; TEC; Infrared detector; HOT;

D O I：

10.1016/j.infrared.2018.10.019

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report on the development of InAs/GaSb type-II superlattice infrared photodetectors for operation under temperatures reachable with thermoelectric cooling. We investigate optically immersed, laterally operated photoconductors with a cutoff wavelength around 10 em at an operating temperature of 200 K. The identification of a suitable superlattice composition, the growth of a linearly graded metamorphic buffer layer and the transfer of the device concept from GaSb to GaAs are motivated and described. We show that immersion lens technology even for non-doping optimized devices enables a peak spectral detectivity above 6 x 10(9) cm Hz(0.5) W-1 at 195 K, approaching the performance of commercially available HgCdTe-based photoconductors.

引用

页码：141 / 144

页数：4

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