Synthesis and Characterization of Manganese Sulphide Thin Films by Chemical Bath Deposition Method

被引:8
|
作者
Geetha, G. [1 ]
Murugasen, P. [2 ]
Sagadevan, S. [3 ]
机构
[1] Bharathiar Univ, Coimbatore, Tamil Nadu, India
[2] Saveetha Engn, Dept Phys, Madras 600123, Tamil Nadu, India
[3] AMET Univ, Ctr Nanotechnol, Madras 603112, Tamil Nadu, India
关键词
GAP;
D O I
10.12693/APhysPolA.132.1221
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Manganese sulphide (MnS) thin films were prepared by chemical bath deposition method. X-ray diffraction analysis was used to study the structure and the crystallite size of MnS thin films. The grain size and the surface morphology were studied using scanning electron microscopy. The optical properties were studied using the UV-visible absorption spectrum. The dielectric properties of MnS thin films were studied for different frequencies and different temperatures. Further, electronic properties, such as valence electron plasma energy, average energy gap or the Penn gap, the Fermi energy and electronic polarizability of the MnS thin films were calculated. The ac electrical conductivity study revealed that the conduction depended both on the frequency and the temperature. The temperature dependent conductivity study confirmed the semiconducting nature of the films.
引用
收藏
页码:1221 / 1226
页数:6
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