MEMS Resonators with Extremely Low Vibration and Shock Sensitivity

被引:0
|
作者
Kim, Bongsang [1 ]
Olsson, Roy H., III [1 ]
Smart, Kevin [1 ]
Wojciechowski, Kenneth E. [1 ]
机构
[1] Sandia Natl Labs, MEMS Technol Dept, Albuquerque, NM 87185 USA
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
MEMS resonator-based oscillators have demonstrated extreme low susceptibility to acceleration. Specifically, oscillators were built employing 100nm-gap electro-statically transduced polysilicon MEMS resonators. An oscillator based upon the Lame-mode of a square-shaped resonator anchored at four corners demonstrated a measured acceleration sensitivity of Gamma(in-plane)=2.1ppb/g and Gamma(out-of-plane)=3.8ppb/g. An oscillator referencing the same design resonator with an additional anchor at the center measured even lower acceleration sensitivity by 5x, Gamma(out-of-plane)=0.74 ppb/g. These measured values are on-par with the current low-G sensitivity quartz-based oscillators. In separately performed drop tests, these oscillators have shown only -7.7 ppm frequency deviation through an 11,000G impact, which corresponds to an acceleration sensitivity of 0.70 ppb/g. Such extremely low sensitivity to vibrations and shocks enables the use MEMS resonators in environments with extremely high accelerations such as in military and aerospace applications.
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页码:606 / 609
页数:4
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