Growth of large high-quality type-II a diamond crystals

被引:0
|
作者
Wang, XC
Ma, HA
Zang, CY
Tian, Y
Li, SS
Jia, XP [1 ]
机构
[1] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Henan Polytech Univ, Jiaozuo 454000, Peoples R China
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Large high-quality type-II a diamond crystals in size of about 4.0mm have been grown under the condition of 5.5GPa and 1200-1300 degrees C by using the temperature gradient method in a domestic cubic anvil high-pressure apparatus. The Fe55CO16Ni25 alloy (KOV) is used as the solvent metal, and Ti with the content 1.5wt.% of the solvent metal is selected as the nitrogen getter to reduce the impurity of nitrogen in the diamond crystal. To avoid the impurities and cave in the crystal, the growth rate of the initial stage of the growing process is controlled within 0.45 mg/h and the ring carbon source of the size Phi 8 mm-Phi 6 mm x 3 mm is used to grow large diamond crystals.
引用
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页码:1800 / 1802
页数:3
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