Anderson localization of electron states in graphene in different types of disorder

被引:63
|
作者
Xiong, Shi-Jie [1 ,2 ]
Xiong, Ye [3 ]
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Nanjing Normal Univ, Coll Phys Sci & Technol, Nanjing 210097, Peoples R China
关键词
D O I
10.1103/PhysRevB.76.214204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Anderson localization of electron states on graphene lattice with diagonal and off-diagonal (OD) disorders in the absence of magnetic field is investigated by using the standard finite-size scaling analysis. In the presence of diagonal disorder all states are localized as predicted by the scaling theory for two-dimensional systems. In the case of OD disorder, the states at the Dirac point (E=0) are shown to be delocalized due to the specific chiral symmetry, although other states (E not equal 0) are still localized. In OD disorder the conductance at E=0 in an MxL rectangular system at the thermodynamical limit is calculated with the transfer-matrix technique for various values of ratio M/L and different types of distribution functions of the OD elements t(nn'). It is found that if all the t(nn)(')'s are positive the conductance is independent of L/M as restricted by two delocalized channels at E=0. If the distribution function includes the sign randomness of elements t(nn)('), the conductivity, rather than the conductance, becomes L/M independent. The calculated value of the conductivity is around 4e(2)/h, in consistence with the experiments.
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页数:10
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