In-assisted deoxidation of GaAs substrates for the growth of single InAs/GaAs quantum dot emitters

被引：4
|
作者：
Xia, Tian [1 ]
Cho, YongJin [1 ]
Cotrufo, Michele [1 ]
Agafonov, Ivan [1 ]
van Otten, Frank [1 ]
Fiore, Andrea [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 05期
关键词：
MBE; deoxidation; quantum dots; OXIDE DESORPTION; ATOMIC-HYDROGEN; SPECTROSCOPY; EMISSION;
D O I：
10.1088/0268-1242/30/5/055009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250-400 mu eV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.
引用
收藏
页码：1 / 6
页数：6
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