Scandium and Gallium implantation doping of silicon carbide

被引：1
|
作者：
Henkel, T [1 ]
Tanaka, Y [1 ]
Kobayashi, N [1 ]
Koutzarov, I [1 ]
Okumura, H [1 ]
Yoshida, S [1 ]
Ohshima, T [1 ]
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
来源：
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷
关键词：
D O I：
10.1557/PROC-512-163
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Rutherford backscattering, Raman spectroscopy as well as photoluminescence, resistivity and Hall measurements have been used to investigate the doping behaviour of Scandium and Gallium ions implanted into Silicon Carbide respectively. The recovery of the crystal lattice after implantation at room temperature followed by rapid thermal annealing is shown to be less effective in the case of Scandium compared with Gallium. Scandium implanted SiC exhibited a high resistivity in comparison to Gallium implanted crystals.
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页码：163 / 168
页数：6
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