A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model

被引：3

作者：

Crippa, Paolo ^{[1
]}

Biagetti, Giorgio ^{[1
]}

Turchetti, Claudio ^{[1
]}

Falaschetti, Laura ^{[1
]}

Mencarelli, Davide ^{[1
]}

Deligeorgis, George ^{[2
]}

Pierantoni, Luca ^{[1
]}

机构：

[1] Univ Politecn Marche, Dept Informat Engn, I-60131 Ancona, Italy

[2] Fdn Res & Technol Hellas FORTH, Inst Elect Struct & Laser IESL, Microelect Res Grp MRG, Iraklion 70013, Greece

来源：

ELECTRONICS | 2021年 / 10卷 / 22期

基金：

欧盟地平线“2020”;

关键词：

carbon nanotube; CNTFET; low-noise amplifier; LNA; compact model; TRANSISTORS INCLUDING NONIDEALITIES; SPICE MODEL; NANOTUBE; NOISE; PERFORMANCE; AMPLIFIER;

D O I：

10.3390/electronics10222835

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented.

引用

页数：14

共 15 条

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