A Surface Photovoltage Study of Surface Defects on Co-Doped TiO2 Thin Films Deposited by Spray Pyrolysis

被引：3
|
作者：
Wafula, Henry [1 ]
Juma, Albert [2 ]
Sakwa, Thomas [1 ]
Musembi, Robinson [3 ]
Simiyu, Justus [3 ]
机构：
[1] Masinde Muliro Univ Sci & Technol, Dept Phys, POB 190, Kakamega 50100, Kenya
[2] Botswana Int Univ Sci & Technol, Dept Phys & Astron, Private Bag 16, Palapye, Botswana
[3] Univ Nairobi, Dept Phys, POB 30197, Nairobi 00100, Kenya
来源：
COATINGS | 2016年 / 6卷 / 03期
关键词：
doping; photovoltage; spray pyrolysis; FERROMAGNETISM;
D O I：
10.3390/coatings6030030
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Surface photovoltage (SPV) spectroscopy is a powerful tool for studying electronic defects on semiconductor surfaces, at interfaces, and in bulk for a wide range of materials. Undoped and Cobalt-doped TiO2 (CTO) thin films were deposited on Crystalline Silicon (c-Si) and Flourine doped Tin oxide (SnO2:F) substrates by chemical spray pyrolysis at a substrate temperature of 400 degrees C. The concentration of the Co dopant in the films was determined by Rutherford backscattering spectrometry and ranged between 0 and 4.51 at %. The amplitude of the SPV signals increased proportionately with the amount of Co in the films, which was a result of the enhancement of the slow processes of charge separation and recombination. Photogenerated holes were trapped at the surface, slowing down the time response and relaxation of the samples. The surface states were effectively passivated by a thin In2S3 over-layer sprayed on top of the TiO2 and CTO films.
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页数：9
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