High-power frequency stabilized tapered diode amplifiers at 1064 nm

被引:4
|
作者
Ostendorf, R. [1 ]
Schilling, C. [1 ]
Kaufel, G. [1 ]
Moritz, R. [1 ]
Wagner, J. [1 ]
Kochem, G. [2 ]
Friedmann, P. [3 ]
Gilly, J. [3 ]
Kelemen, M. T. [3 ]
机构
[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
[2] Fraunhofer Inst Laser Technol, D-52074 Aachen, Germany
[3] M2k Laser GmbH, D-79108 Freiburg, Germany
关键词
High Brightness; Beam Quality; High Power; Diode Laser; Tapered Laser; AlGaAs-InGaAs; Semiconductor; Second Harmonic Generation;
D O I
10.1117/12.808107
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The realization of a compact green-emitting solid state laser source for applications like laser TV or head-up displays is still a challenging task. One way to generate green light with a solid state laser source is nonlinear frequency upconversion (frequency-doubling) of e. g. 1064 nm to 532 nm. In order to achieve good conversion efficiencies tunable laser sources with output powers of several watts, narrow bandwidth and good beam quality are required. We have realized tapered laser diodes based on the GaInAs/AlGaAs material system emitting at a central wavelength of 1064 nm. These devices have an AR-coating on the front facet as well as on the ridge facet. Therefore, these laser diodes can be frequency stabilized in an external cavity setup consisting either of a grating in Littrow mounting placed on the rear side or by an integrated Fiber Bragg grating. The latter configuration allows a compact low footprint integration of the laser diodes into compact laser modules. The optical output power of these devices frequency stabilized at 1064 nm exceeds 4 W with beam qualities suitable for frequency doubling (M-2 < 2) and a tuning range from 1030 nm to 1070 nm. For laser diodes with a HR coating on the ridge facet even higher output powers of more than 8 W are achieved. The ridge and tapered section of the tapered diode amplifiers are contacted separately in order to enable the modulation of the light source by the variation of the ridge current. The rapid temporal modulation achieved this way is a prerequisite for the use of such lasers in flying spot display applications.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] High-power distributed-feedback tapered master-oscillator power amplifiers emitting at 1064 nm
    Jedrzejczyk, D.
    Brox, O.
    Bugge, F.
    Fricke, J.
    Ginolas, A.
    Paschke, K.
    Wenzel, H.
    Erbert, G.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VIII, 2010, 7583
  • [2] High-power near-diffraction-limited tapered amplifiers at 1064 nm for optical intersatellite communications
    Chazan, P
    Mayor, JM
    Morgott, S
    Mikulla, M
    Kiefer, R
    Muller, S
    Walther, M
    Braunstein, J
    Weimann, G
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (11) : 1542 - 1544
  • [3] Optimisation of 660 nm high-power tapered diode lasers
    Kaspari, C.
    Blume, G.
    Feise, D.
    Paschke, K.
    Erbert, G.
    Weyers, M.
    IET OPTOELECTRONICS, 2011, 5 (03) : 121 - 127
  • [4] High-Power Frequency Stabilized GaSb DBR Tapered Laser
    Mueller, Mirjam
    Bauer, Adam
    Lehnhardt, Thomas
    Kamp, Martin
    Forchel, Alfred
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) : 2162 - 2164
  • [5] Widely Tunable High-Power Tapered Diode Laser at 1060 nm
    Jensen, Ole Bjarlin
    Sumpf, Bernd
    Erbert, Goetz
    Petersen, Paul Michael
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (21) : 1624 - 1626
  • [6] Filamentation in high-power tapered semiconductor amplifiers
    Bossert, DJ
    Dente, GC
    Tilton, ML
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, 1997, 3001 : 63 - 73
  • [7] High-Power Pulse Generation in GHz Range With 1064-nm DBR Tapered Laser
    Klehr, Andreas
    Sumpf, Bernd
    Hasler, Karl-Heinz
    Fricke, Joerg
    Liero, Armin
    Erbert, Goetz
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (11) : 832 - 834
  • [8] Stable single-frequency operation of a high-power external cavity tapered diode laser at 780 nm
    Goyal, AK
    Gavrilovic, P
    Po, H
    APPLIED PHYSICS LETTERS, 1997, 71 (10) : 1296 - 1298
  • [9] Stable single-frequency operation of a high-power external cavity tapered diode laser at 780 nm
    Polaroid Corp, Cambridge, United States
    Appl Phys Lett, 1600, 10 (1296-1298):
  • [10] Tapered Amplifiers for High-Power MOPA Setups between 750nm and 2000nm
    Ogrodowski, L.
    Friedmann, P.
    Gilly, J.
    Kelemen, M. T.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XIX, 2020, 11301