Power performance of PNP InAlAs/InGaAs HBTs

被引：11

作者：

Sawdai, D ^{[1
]}

Zhang, X ^{[1
]}

Pavlidis, D ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1, 2]. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated [3], nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine their suitability for high-frequency power applications. PNP HBTs demonstrated f(T) and f(max) as high as 13 and 35 GHz, respectively. Power performance at 10 GHz was comparable to InP-based NPN single HBTs, providing up to 10 dB of gain, 0.49 mW/mu m(2) of output power, and 24% power-added efficiency. Analysis of these HBTs suggests further design and epilayer optimizations for increased power performance.

引用

页码：72 / 75

页数：4

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