Structural and optical properties of In35Sb45Se20-xTex phase-change thin films

被引：5
|
作者：
Diab, A. K. [1 ]
Wakkad, M. M. [1 ]
Shokr, E. Kh. [1 ]
Mohamed, W. S. [1 ]
机构：
[1] Sohag Univ, Fac Sci, Dept Phys, Sohag 82524, Egypt
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2010年 / 71卷 / 09期
关键词：
Chalcogenide; Glasses; Thin films; X-ray diffraction; Optical properties; LASER-INDUCED CRYSTALLIZATION; ELECTRICAL-PROPERTIES; BEHAVIOR; THICKNESS;
D O I：
10.1016/j.jpcs.2010.06.011
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Physical properties of In35Sb45Se20-xTex thin films with different compositions (x = 2.5, 5, 7.5, 10, 12.5 and 15 at%) prepared by electron beam evaporation method are studied. X-ray diffraction results indicate that the as-evaporated films depend on the Te content and the crystallized compounds consist mainly of Sb2Se3 with small amount of Sb2SeTe2. Transmittance and reflectance of the films are found to be thickness dependent. Optical-absorption data indicate that the absorption mechanism is direct transition. Optical band gap values decrease with increase in Te content as well as with increase in film thickness. Published by Elsevier Ltd.
引用
收藏
页码：1381 / 1387
页数：7
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