Thermal conductivity of silicon carbide composites with highly oriented graphene nanoplatelets

被引:67
|
作者
Roman-Manso, Benito [1 ]
Chevillotte, Yoan [1 ]
Isabel Osendi, M. [1 ]
Belmonte, Manuel [1 ]
Miranzo, Pilar [1 ]
机构
[1] CSIC, Inst Ceram & Glass ICV, Campus Cantoblanco,Kelsen 5, Madrid 28049, Spain
关键词
Graphene nanoplatelets; Silicon carbide; Composites; Spark plasma sintering; Thermal conductivity; RARE-EARTH-OXIDE; SIC CERAMICS; ELECTRICAL-RESISTIVITY; NITRIDE COMPOSITES; LAYER GRAPHENE; ADDITIVES; ALUMINA; HEAT; TRANSPORT; GRAPHITE;
D O I
10.1016/j.jeurceramsoc.2016.06.016
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Dense silicon carbide (SiC)-based composites containing up to 20 vol.% of graphene nanoplatelets (GNPs) were manufactured via a liquid-phase Spark Plasma Sintering (SPS) process, employing Y2O3 and Al2O3 as sintering aids. The applied uniaxial pressure during SPS produced a preferential orientation of the GNPs, with the ab-plane perpendicular to the pressing axis, thus bringing about high thermal anisotropy. Thermal diffusivity/conductivity were measured as a function of the GNPs content, being enhanced by similar to 30% in the perpendicular direction to the SPS pressing axis, whereas a moderate decrease was observed in the parallel direction owing to the much lower intrinsic conductivity of the aligned GNPs in the c-axis, with no significant contribution of the thermal resistance of the GNP-SiC interfaces. A non-monotonical temperature dependence for the thermal conductivity was detected in composites containing <10 vol.% GNPs, explained by the strong p-doping of these SiC ceramics. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3987 / 3993
页数:7
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