Design of a K-Band Power Amplifier for High Gain, Output Power and Efficiency on 0.18-μm SiGe BiCMOS Process

被引：0

作者：

Kim, Kyoungwoon ^{[1
]}

Cam Nguyen ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

来源：

2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年

关键词：

CMOS/BiCMOS power amplifier; lumped Wilkinson power divider/combiner; power amplifier; RFIC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design of a K-band power amplifier (PA) on a 0.18 mu m SiGe BiCMOS process for high gain, output power and power-aided efficiency (PAE) is presented. The designed PA is composed of a drive amplifier, two identical main amplifiers, and lumped-element Wilkinson power divider and combiner. The PA achieves 37.5-39.5 dB of small-signal gain, 18.6-20.6 dBm of saturated output power, and 18-29% of PAE over the entire K-band (18-26.5 GHz). Specifically at 24 GHz, it achieves 19.4 dBm output power, 22.3% PAE, and 37.6-dB gain.

引用

页码：594 / 596

页数：3

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