Dry etching of aluminum nitride by an ion beam

被引：1

作者：

Demidov, DM ^{[1
]}

Leus, RV ^{[1
]}

Chalyi, VP ^{[1
]}

机构：

[1] Ctr Adv Technol & Dev, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

Aluminum; Nitride; Magnetron Sputtering; Aluminum Nitride; Mesa Stripe;

D O I：

10.1134/1.1261712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study of the important problem of dry etching AlN by an ion beam has been carried out. The etching rate as a function of the parameters of the process has been determined for layers deposited by vapor-phase epitaxy and by magnetron sputtering. It is shown possible to form a specified relief (systems of mesa stripes) in AlN layers. It is demonstrated that this method can be used for smoothing the AlN surface. (C) 1997 American Institute of Physics. [S 1063-7850(97)01706-0].

引用

页码：454 / 455

页数：2

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