Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell

被引：22

作者：

Ko, Wai Son ^{[1
]}

Tran, Thai-Truong D. ^{[1
]}

Bhattacharya, Indrasen ^{[1
]}

Ng, Kar Wei ^{[1
]}

Sun, Hao ^{[1
,2
]}

Chang-Hasnain, Connie ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

来源：

NANO LETTERS | 2015年 / 15卷 / 08期

基金：

美国国家科学基金会;

关键词：

nanopillar; nanowire; solar cell; angle insensitive; radial junction; silicon substrate; NANOWIRE; SILICON; EFFICIENCY; LIMIT; PHOTOVOLTAICS; ABSORPTION; SUBSTRATE; EMISSION; GROWTH; SIZE;

D O I：

10.1021/acs.nanolett.5b00756

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Low cost, high efficiency photovoltaic can help accelerate the adoption of solar energy. Using tapered indium phosphide nanopillars grown on a silicon substrate, we demonstrate a single nanopillar photovoltaic exhibiting illumination angle insensitive response. The photovoltaic employs a novel regrown core-shell p-i-n junction to improve device performance by eliminating shunt current paths, resulting in a high V-OC of 0.534 V and a power conversion efficiency of 19.6%. Enhanced broadband light absorption is also demonstrated over a wide spectral range of 400-800 nm.

引用

页码：4961 / 4967

页数：7

共 16 条

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