L-band-related interband transition in InSb/GaSb self-assembled quantum dots

被引：0
|
作者：
Rybchenko, S. I. [1 ]
Gupta, R. [1 ]
Itskevich, I. E. [1 ]
Haywood, S. K. [1 ]
机构：
[1] Univ Hull, Dept Engn, Kingston Upon Hull HU6 7RX, N Humberside, England
来源：
NARROW GAP SEMICONDUCTORS 2007 | 2008年 / 119卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effect of lattice-mismatch-induced strain on Gamma-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Gamma-L and Gamma-X crossover. The Gamma-L crossover is predicted for realistic self-assembled InSb/GaSb (001) dots, in which the lowest interband transition is from the L-valley state. Available experimental PL data were found to be in good agreement with the crossover phenomenon.
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页码：81 / 83
页数：3
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