Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators

被引:16
|
作者
Thiel, Lillian [1 ]
Logan, Alan D. [1 ]
Chakravarthi, Srivatsa [1 ]
Shree, Shivangi [2 ]
Hestroffer, Karine [3 ]
Hatami, Fariba [3 ]
Fu, Kai-Mei C. [1 ,2 ]
机构
[1] Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA
[2] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[3] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
基金
美国国家科学基金会;
关键词
HYDROGEN SILSESQUIOXANE; 2ND-HARMONIC GENERATION; RING-RESONATORS; SILICON; EFFICIENCY; COMPACT; FILMS;
D O I
10.1364/OE.446244
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on a silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of 10(4). Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:6921 / 6933
页数:13
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