High-Performance Oxide TFTs Based on Solution-Processed ZTO

被引：0
|
作者：
Hu, Ching-Chien [1 ]
Wu, Cheng-Han [1 ]
Chien, Chih-Wei [1 ]
Kung, Yen-Cheng [1 ]
Chang, Feng-Ming [1 ]
Hsu, Po-Ching [1 ]
Liao, Chia-Hsin [1 ]
Lin, Shiuan-Iou [1 ]
Wu, Chung-Chih [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 10617, Taiwan
来源：
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY | 2010年
关键词：
THIN-FILM TRANSISTORS; ROOM-TEMPERATURE; LAYER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin-film transistors (TFTs) based on solution-processed Zinc-Tin oxides (ZTO) of different Zn:Sn compositions are investigated. The solution-processed ZTO TFTs show rather high device performances, with the mobility up to 15 cm(2)/V-s, the on/off ratio up to 10(6)similar to 10(7) and a subthreshold slope <0.6 V/decade.
引用
收藏
页码：311 / +
页数：2
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