Study of In-Se binaries of In-rich CuInSe2 thin film prepared by selenization after cosputtering

被引：9
|
作者：
Li, Xinyi
Liu, Weifeng
Jiang, Guoshun
Wang, Dacheng
Zhu, Changfei [1 ]
机构：
[1] Chinese Acad Sci, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China
来源：
MATERIALS LETTERS | 2012年 / 70卷
关键词：
Thin film; Phase transformation; Raman; GROWTH; IN2SE3; LAYERS; ALLOY;
D O I：
10.1016/j.matlet.2011.11.110
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In-rich CuInSe2 thin film has been fabricated by selenization of a Cu-In alloy precursor and the selenization was performed under a gradient temperature field. The morphology and crystalline of the as-prepared film have been characterized by XRD, SEM and EDS, which show an inhomogeneous thin film with different composition has been obtained. Raman characterizations reveal that the existence of indium selenides, such as InSe and In2Se3. Also, conclusions of phase transformations between In-Se binaries have been confirmed through the variations of the relative intensity of the Raman shift, especially the 150 cm (-1) and 181 cm(-1). In addition, a temperature-induced competition between CuInSe2 and InSe2 has been suggested. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：116 / 118
页数：3
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