Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

被引：24
|
作者：
Liu, Yi-Jung [1 ]
Huang, Chien-Chang [1 ]
Chen, Tai-You [1 ]
Hsu, Chi-Shiang [1 ]
Liou, Jian-Kai [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2011年 / 47卷 / 06期
关键词：
Current spreading; GaN; junction temperature; light-emitting diode; ESD CHARACTERISTICS; TEMPERATURE; LEDS;
D O I：
10.1109/JQE.2011.2114330
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaN-based light-emitting diode with a p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of the current-crowding phenomenon yields a reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors, including lower turn-on voltage, lower parasitic series resistance, and reduced p-n junction temperature, are achieved. In addition, due to the improved current-spreading ability, longer life-time, driving at medium current injection (60 mA), as well as significantly enhanced electrostatic discharge performance, are obtained.
引用
收藏
页码：755 / 761
页数：7
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