Characterization of Crack-tip Dislocations and Their Effects on Materials Fracture

被引:0
|
作者
Higashida, Kenji [1 ]
Tanaka, Masaki [1 ]
Sadamatsu, Sunao [1 ]
机构
[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8190395, Japan
来源
PRICM 7, PTS 1-3 | 2010年 / 654-656卷
关键词
Crack; dislocation; shielding; dislocation tomography; TRANSMISSION ELECTRON-MICROSCOPY; TO-DUCTILE TRANSITION; SILICON; TOMOGRAPHY; CRYSTALS;
D O I
10.4028/www.scientific.net/MSF.654-656.2307
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Three-dimensional structure of crack tip dislocations were investigated by combining scanning transmission electron microscopy (STEM) and electron tomography (ET) in silicon single crystals. P-type (001) silicon single crystals were employed. < 110 > cracks were introduced from an indent on the (001) surface. The specimen was heated at 873K in order to introduce dislocations at the crack tips. The specimen was thinned to include the crack tip in the foil by an iron milling machine. STEM-ET observation revealed the three-dimensional structure of crack tip dislocations. Their Burgers vectors were determined by using an invisibility criterion. The local stress intensity factor was calculated using the dislocation characters obtained in the observation in this study, indicating that the dislocations observed were mode II shielding type dislocations.
引用
收藏
页码:2307 / 2311
页数:5
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