Ferromagnetic Properties of Y-Doped AlN Nanorods

被引:40
|
作者
Lei, Weiwei [1 ,2 ]
Liu, Dan [1 ,3 ]
Chen, Xin [1 ]
Zhu, Pinwen [1 ]
Cui, Qiliang [1 ]
Zou, Guangtian [1 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Max Planck Inst Colloids & Interfaces, Dept Colloid Chem, D-14424 Potsdam, Germany
[3] Yonsei Univ, Dept Earth Syst Sci, Seoul 120749, South Korea
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 37期
关键词
THIN-FILMS; ROOM-TEMPERATURE; ZNO;
D O I
10.1021/jp102375e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Room-temperature ferromagnetism has been observed in Y-doped AlN (AlN:Y) nanorods. Our first-principle calculations have demonstrated that the ferromagnetism in AlN:Y is from Al vacancies and that the introduction of nonmagnetic rare-earth element Y into AlN can significantly reduce the formation energy of Al vacancy which leads to high Al vacancies responsible for the observed ferromagnetism in AlN:Y nanorods. These findings illustrate an efficient way to reduce the formation energy of cation vacancy by doping nonmagnetic elements, such as Y, leading to ferromagnetism in semiconductors.
引用
收藏
页码:15574 / 15577
页数:4
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