ALN-BASED PIEZOELECTRIC RESONATOR FOR INFRARED SENSING APPLICATION

被引：0

作者：

Ang, Wan C. ^{[1
,2
]}

Kropelnicki, Piotr ^{[1
]}

Campanella, Humberto ^{[1
]}

Zhu, Yao ^{[1
,2
]}

Randles, Andrew B. ^{[1
]}

Cai, Hong ^{[1
]}

Gu, Yuandong A. ^{[1
]}

Leong, Kam C. ^{[3
]}

Tan, Chuan S. ^{[2
]}

机构：

[1] ASTAR, Inst Microelect, Singapore, Singapore

[2] Nanyang Technol Univ, Singapore 639798, Singapore

[3] GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore

来源：

2014 IEEE 27TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2014年

关键词：

SENSOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a highly sensitive aluminum nitride (AlN) based resonant uncooled infrared (IR) detector utilizing photo-sensitive and piezoelectric properties of polycrystalline AlN. The design, fabrication, and IR sensing characterization of the device are presented. Instead of resonant frequency shift, S-21 magnitude shift was observed upon IR illumination under both vacuum and ambient measurements. Thus, photoresponse mechanism was proposed rather than thermal effect. An AlN resonator operating at 2.336 GHz with a quality factor (Q) of 830 exhibits an IR responsivity and detectivity of 166 kdB/W and 1.41 x 10(7) cm root Hz/W, respectively.

引用

页码：688 / 691

页数：4

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