Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering

被引：0
|
作者：
Zhang, Ziming [1 ]
Li, Jingjie [1 ]
Zhou, Yijian [1 ]
Fu, Hongyuan [1 ]
Zhang, Zixu [1 ]
Xiang, Guojiao [1 ]
Zhao, Yang [1 ]
Zhuang, Shiwei [2 ]
Yang, Fan [3 ]
Wang, Hui [1 ]
机构：
[1] Henan Univ Sci & Technol, Sch Phys & Engn, Henan Key Lab Photoelect Energy Storage Mat & App, Luoyang 471003, Peoples R China
[2] Zhengzhou Univ, Minist Educ, Dept Phys & Engn, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China
[3] Jilin Jianzhu Univ, Sch Elect Engn & Comp, Jilin Prov Key Lab Architectural Elect & Comprehe, Changchun 130118, Peoples R China
来源：
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS | 2019年 / 22卷 / 06期
基金：
中国国家自然科学基金;
关键词：
InN nanodots; magnetron sputtering; highly preferred orientation; electrical characteristic; LIGHT-EMITTING-DIODES; GROWTH;
D O I：
10.1590/1980-5373-MR-2019-0380
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we reported the effects of sputtering power on the structure, optical and electrical properties of InN nanodots prepared on Al2O3 substrate by magnetron sputtering.The results showed that the as-grown InN films exhibited uniform nanodot morphology and the size of the InN nano grains increased with the sputtering power was increased. The InN nanodot exhibited highly c-axis prefered orientation with mainly InN(002) diffraction. The optical band gap of InN samples showed an decreasing trend with the increase in sputteirng power. Moreover, the electrical properties of the InN samples were discussed in detail by hall effect and the carrier concentration and mobility could be adjusted from 3.233x1019 to 1.655x1020 cm-3 and 1.151 to 10.101 cm2/v.s, respectively. These results will lay a good fundation for the applicaion of InN material in the field of gas sensers and light emitting diodes.
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页数：5
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