Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide

被引：83

作者：

Velasco, Aitor V. ^{[1
]}

Calvo, Maria L. ^{[1
]}

Cheben, Pavel ^{[2
]}

Ortega-Monux, Alejandro ^{[3
]}

Schmid, Jens H. ^{[2
]}

Alonso Ramos, Carlos ^{[3
]}

Molina Fernandez, Inigo ^{[3
]}

Lapointe, Jean ^{[2
]}

Vachon, Martin ^{[2
]}

Janz, Siegfried ^{[2
]}

Xu, Dan-Xia ^{[2
]}

机构：

[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Opt, E-28040 Madrid, Spain

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Univ Malaga, ETSI Telecomunicac, E-29071 Malaga, Spain

来源：

OPTICS LETTERS | 2012年 / 37卷 / 03期

关键词：

MODE CONVERTER; ROTATOR; EFFICIENT;

D O I：

10.1364/OL.37.000365

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 mu m. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm. (C) 2012 Optical Society of America

引用

页码：365 / 367

页数：3

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