One port contour-mode ZnO piezoelectric MEMS resonator

被引：7

作者：

Gryba, Tadeusz ^{[1
,2
,3
]}

Carlier, Julien ^{[1
,2
,3
]}

Wang, Shengxiang ^{[1
,2
,3
]}

Zhao, XingZhong ^{[4
]}

Guo, Shishang ^{[4
]}

Lefebvre, Jean-Etienne ^{[1
,2
,3
]}

机构：

[1] IEMN, UVHC, F-59313 Valenciennes, France

[2] Univ Lille Nord France, F-59000 Lille, France

[3] CNRS, UMR 8520, F-59650 Villeneuve Dascq, France

[4] Wuhan Univ, Dept Elect Sci & Technol, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 09期

关键词：

MEMS resonators; Piezoelectric resonators; Zinc-oxide; Aluminium nitride; THIN-FILM;

D O I：

10.1016/j.mee.2011.04.062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on design, fabrication and experimental testing of one port ZnO contour-mode resonant MEMS. The devices are fabricated from silicon wafers using a 4-mask process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication of multiple filters at arbitrary frequencies on the same chip. The one port ZnO contour mode resonator is compared with the AIN structure. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3003 / 3010

页数：8

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