Si Nanopillar Array Surface-Textured Thin-Film Solar Cell With Radial p-n Junction

被引：32
|
作者：
Wong, S. M. [1 ,2 ]
Yu, H. Y. [1 ,2 ]
Li, J. S. [1 ,2 ]
Li, Y. L. [1 ,2 ]
Singh, N. [2 ]
Lo, Patrick G. Q. [2 ]
Kwong, D. L. [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] ASTAR, Inst Microelect, Singapore 117685, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期
关键词：
Power conversion efficiency (PCE); Si nanopillar (SiNP); solar cell; NANOWIRE ARRAYS;
D O I：
10.1109/LED.2010.2091715
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical characteristics of a Si nanopillar array surface-textured thin-film solar cell with radial p-n junction are studied in this letter. Several key factors affecting the power conversion efficiency (PCE) of the solar cell, e.g., surface recombination velocity, the shell thickness, back surface field, and minority carrier diffusion length, are highlighted. The radial p-n junction provides better PCE than the axial p-n junction at same given conditions (i.e., doping concentration, minority carrier diffusion length, etc.), indicating that the radial p-n junction is preferred in improving the cell's performance.
引用
收藏
页码：176 / 178
页数：3
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