Research of all-optical NAND gates based on quantum dot semiconductor optical amplifiers cascaded connection XGM and XPM

被引:10
|
作者
Mi, Shu-Chao [1 ]
Wang, Hai-Long [1 ]
Zhang, Shu-Yu [1 ]
Gong, Qian [2 ]
机构
[1] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Shandong, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源
OPTIK | 2020年 / 202卷
基金
中国国家自然科学基金;
关键词
QD-SOA; All-Optical NAND gate; Extinction ratio; Conversion efficiency; MACH-ZEHNDER INTERFEROMETER; 2-PHOTON ABSORPTION; XOR; PERFORMANCE; DYNAMICS; DESIGN; TIME;
D O I
10.1016/j.ijleo.2019.163551
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A novel structure to implement an all-optical NAND gate which utilizes cascaded connection XGM and XPM based on quantum dot semiconductor optical amplifier (QD-SOA) is presented. The QD-SOA carrier and optical field equation are analyzed by establishing static and dynamic models. The performance of all-optical NAND gate has been optimized. The proposed structure can operate error-free at 640 Gb/s as an all-optical NAND gate. At the same time, high extinction ratio(ER) and conversion efficiency can be obtained. The research results have guiding significance for the application of QD-SOA in the design of all-optical NAND gate.
引用
收藏
页数:7
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