Detection of the metal-insulator transition in disordered systems of magnetic nanoislands

被引：10

作者：

Boltaev, A. P. ^{[1
]}

Pudonin, F. A. ^{[1
]}

Sherstnev, I. A. ^{[1
]}

Egorov, D. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2017年 / 125卷 / 03期

关键词：

THIN-FILM; MAGNETORESISTANCE;

D O I：

10.1134/S1063776117080027

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the conductivity and permittivity of a series of nanoisland-type FeNi films with an effective thickness of up to 3.2 nm on different substrates. It has been observed that the quantity Re epsilon changes its sign at effective thickness d (*) ae 1.5-1.8 nm, because of the metal-insulator transition. Analysis of the temperature dependences of the conductivity has confirmed the existence of the metal-insulator transition at the same thickness d (*). It has been concluded that the introduced effective permittivity can serve as a characteristic of island metal systems.

引用

页码：465 / 468

页数：4

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