The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer

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作者：
Vakhtomin, YB
Finkel', MI
Antipov, SV
Smirnov, KV
Kaurova, NS
Drakinskii, VN
Voronov, BM
Gol'tsman, GN
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来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2003年 / 48卷 / 06期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer M-O layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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页码：671 / 675
页数：5
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