Enhanced light emission in active silicon-on-insulator photonic crystal slabs and slot waveguides

被引:4
|
作者
Gerace, D. [1 ]
Andreani, L. C. [2 ]
Belotti, M. [2 ]
Galli, M. [2 ]
Liscidini, M. [2 ]
Patrini, M. [2 ]
Politi, A. [2 ]
Canino, A. [3 ]
Irrera, A. [3 ]
Lo Savio, R. [3 ]
Miritello, M. [3 ]
Priolo, F. [3 ]
Chen, Y. [4 ,5 ]
机构
[1] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
[3] CNR, INFM, MATIS, Dipartimento Fis & Astronomia, I-95123 Catania, Italy
[4] Ecole Normale Super, Dept Chim, F-75231 Paris 05, France
[5] CNRS, Lab Photon, F-91460 Marcoussis, France
关键词
photonic crystal slabs; planar waveguides; photonic integrated circuits; silicon photonics;
D O I
10.1109/ICTON.2007.4296125
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present experimental measurements on Silicon-on-insulator (SOI) photonic crystal slabs with an active layer containing Er3+ ions-doped Silicon nanoclusters (Si-nc), showing strong enhancement of 1.54 mu m emission at room temperature. We provide a systematic theoretical analysis to interpret such results. In order to get further insight, we discuss experimental data on the guided luminescence of unpatterned SOI planar slot waveguides, which show enhanced light emission in transverse-magnetic (TM) modes over transverse-electric (TE) ones.
引用
收藏
页码:8 / +
页数:2
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