Surface morphology of perovskite film is critical for highly efficient perovskite-based solar cells. The solution processed perovskite films tend to have voids and pin-holes between the crystals, which has been cited as very detrimental to device performance. The voids and pin-holes not only cause electrical shorting but deleteriously impact charge dissociation/transport/recombination because of the defects existed on the surface and grain boundaries of the perovskite films as well. Here, we demonstrate passivation of the perovskite surface and grain boundaries by small molecules through infiltration of subphthalo-cyanines (SubPc) into the perovskite film. Reduced surface defects have been obtained, which was verified by XRD and time-resolved dynamics measurements. As a result, the power conversion efficiency for the solution-processed planar heterojunction solar cells has been enhanced from 9.96% for the contrastive perovskite solar cells to 13.6% for the SubPc passivated perovskite solar cells.
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State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Zhiqi Li
Jiajun Dong
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State Key Laboratory of Superhard Materials, Jilin UniversityState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Jiajun Dong
Chunyu Liu
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State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Chunyu Liu
Jiaxin Guo
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State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Jiaxin Guo
Liang Shen
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State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Liang Shen
Wenbin Guo
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State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
机构:
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Jiang, Qi
Zhao, Yang
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Zhao, Yang
Zhang, Xingwang
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Zhang, Xingwang
Yang, Xiaolei
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Yang, Xiaolei
Chen, Yong
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Chen, Yong
Chu, Zema
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Chu, Zema
Ye, Qiufeng
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Ye, Qiufeng
Li, Xingxing
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Li, Xingxing
Yin, Zhigang
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Yin, Zhigang
You, Jingbi
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Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R ChinaChinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing, Peoples R China
机构:
Institute of Optoelectronics, Beijing Jiaotong University, Beijing,100044, ChinaInstitute of Optoelectronics, Beijing Jiaotong University, Beijing,100044, China
Ge, Kunyang
Liang, Chunjun
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Institute of Optoelectronics, Beijing Jiaotong University, Beijing,100044, ChinaInstitute of Optoelectronics, Beijing Jiaotong University, Beijing,100044, China