Study of Piezoelectric-mechanical Properties of III-V Nitride Based Tunnel FET

Wide band gap semiconductors such as III-V Nitrides have earned a prominent place in applications related to sensing, amplification, optoelectronics and photonics. Photonic devices based on III-nitrides propose many advantages including blue/green/UV emission and high emission effiiencies. One of the emerging devices that can use wide band gap semiconductors as a promising channel material is a Tunnel FET. Tunnel Field Effect Transistors have evolved as promising candidates in the domain of next generation semiconductor devices. Based on the concept of quantum mechanical tunneling, these devices come in the category of steep slope transistors and can achieve subthreshold slope steeper than 60mv/decade, whereas MOSFETs have a limitation on subthreshold slope. Research is still being carried out on different geometries of Tunnel FETs for enhanced performance and exploiting different channel materials as well. Narrow band gap materials such as III-V semiconductors are being used as effective channel materials. However, these materials tend to give a high off current and ambipolar conduction. To suppress off current, wide band gap materials such as III-V Nitride Heterojunctions are being used as channel materials in recent research. These heterostructures exhibit piezoelectric and spontaneous polarization effects, which can induce large electric field and enhance Band to Band tunneling probability in these devices. This work aims to study effect of piezoelectric and spontaneous polarization on the performance of III-V Nitride based TFETs.