Degradation and dose rate effects of bipolar linear regulator on ionizing radiation

被引：6
|
作者：
Wang Yi-Yuan [1 ,2 ,3 ]
Lu Wu [1 ,2 ]
Ren Di-Yuan [1 ,2 ]
Guo Qi [1 ,2 ]
Yu Xue-Feng [1 ,2 ]
He Cheng-Fa [1 ,2 ]
Gao Bo [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
[2] Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
[3] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
来源：
ACTA PHYSICA SINICA | 2011年 / 60卷 / 09期
基金：
中国国家自然科学基金;
关键词：
bipolar linear regulators; total ionizing dose; dose rate effect; radiation damage; HARDNESS-ASSURANCE; TRANSISTORS;
D O I：
10.7498/aps.60.096104
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In order to investigate the dose rate effects and the radiation response of the voltage regulator, a group of bipolar linear regulators are irradiated by(60) Co gamma at high and low dose rate. The results show that many of the parameters of the regulator, such as the max drive current, the output voltage, the line regulation and the dropout voltage, are sensitive to ionizing irradiation. Compared the radiation responses of the devices between high and low dose rate, the dose-rate effect is found to be dependent on device. The reasons for the degradation are discussed by combining the radiation response of the transistor and the amplifier with the circuit characteristic of the linear regulator. The dose rate effects are also analyzed from the annealing characteristics. So this is not only useful for their applicalion in space, but also helpful for the design of radiation hardness device.
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页数：9
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