Effect of strain and confinement on the effective mass of holes in InSb quantum wells

被引：6

作者：

Gaspe, C. K. ^{[1
]}

Edirisooriya, M. ^{[1
]}

Mishima, T. D. ^{[1
]}

Jayathilaka, P. A. R. Dilhani ^{[1
]}

Doezema, R. E. ^{[1
]}

Murphy, S. Q. ^{[1
]}

Santos, M. B. ^{[1
]}

Tung, L. C. ^{[2
]}

Wang, Y. -J. ^{[2
]}

机构：

[1] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, Norman, OK 73019 USA

[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 03期

关键词：

CYCLOTRON-RESONANCE;

D O I：

10.1116/1.3553457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study of the hole effective mass was conducted in a series of five remotely doped InSb quantum wells under biaxial compressive strain. From cyclotron resonance measurements at 4.2 K, an increase in hole effective mass was observed with increasing hole density in otherwise similar structures from 0.045m(e) at 2.1 x 10(11) cm(-2) to 0.083m(e) at 5.1 x 10(11) cm(-2). The smallest effective mass (0.017me) was observed in the quantum well with the largest compressive strain (1.05%) and narrowest well width (7 nm). Our measurements are in qualitative agreement with theoretical expectations. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3553457]

引用

页数：4

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