Global limitation on fast switching by semiconductor devices

被引：0

作者：

Kardo-Sysoev, Alexei F. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

ULTRA-WIDEBAND, SHORT-PULSE ELECTROMAGNETICS 8 | 2007年

关键词：

D O I：

10.1007/978-0-387-73046-2_31

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：235 / 242

页数：8

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