Narrow-linewidth master-oscillator power amplifier based on a semiconductor tapered amplifier

被引：28
|
作者：
Wilson, AC [1 ]
Sharpe, JC [1 ]
McKenzie, CR [1 ]
Manson, PJ [1 ]
Warrington, DM [1 ]
机构：
[1] Univ Otago, Dept Phys, Dunedin, New Zealand
来源：
APPLIED OPTICS | 1998年 / 37卷 / 21期
关键词：
D O I：
10.1364/AO.37.004871
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The output of a grating-stabilized external-cavity diode laser was injected into a semiconductor tapered amplifier in a master-oscillator power amplifier configuration, producing as much as 500 mW of power with narrow linewidth. The additional linewidth that is due to the tapered amplifier is much smaller than the typical linewidth of grating-stabilized laser diodes. To demonstrate the usefulness of the narrow linewidth and high output power, we used the system to perform Doppler-free two-photon spectroscopy with rubidium. (C) 1998 Optical Society of America.
引用
收藏
页码：4871 / 4875
页数：5
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