Linear and nonlinear optical properties of stepped InxGa1-xAs/GaAs quantum wells

被引：3
|
作者：
Tomassini, N [1 ]
D'Andrea, A
Righini, M
Selci, S
Calcagnile, L
Cingolani, R
Schiumarini, D
Simeone, MG
机构：
[1] CNR, MITER, Ist Metodol Avanzate Inorg, I-00016 Monterotondo, Staz Roma, Italy
[2] CNR, Ist Struttura Mat, I-00133 Rome, Italy
[3] Univ Lecce, Ist Nazl Fis Mat, Dipartimento Sci Mat, I-73100 Lecce, Italy
[4] CNR, MITER, Ist Chim Mat, I-00016 Monterotondo, Staz Roma, Italy
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期
关键词：
D O I：
10.1063/1.121690
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Systematic studies of polaritons in single stepped quantum wells are performed, and the presence of forbidden transitions in optical spectra are taken as a fingerprint of nonhomogeneous indium concentration. The large intensities of such transitions for well thicknesses in the range of quasi-two-dimensional exciton behavior are pointed out. Finally, second harmonic generation excited at half gap is found to be enhanced with respect to the bulk contribution as suggested by the theory. (C) 1998 American Institute of Physics. [S0003-6951(98)00842-0].
引用
收藏
页码：2245 / 2247
页数：3
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