Properties of indium tin oxide films with indium tin modulation layers prepared by nano-scale controlled reactive magnetron sputtering

被引：8
|
作者：
Alam, AHMZ
Takashima, Y
Sasaki, K
Hata, T
机构：
[1] Faculty of Technology, Kanazawa University, Kanazawa 920
来源：
THIN SOLID FILMS | 1996年 / 279卷 / 1-2期
关键词：
indium; indium oxide; sputtering; tin;
D O I：
10.1016/0040-6090(95)08166-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new preparation method for tin-doped indium oxide (ITO) films containing nano-scale indium tin (IT) sandwich layer(s) by the combined use of reactive and non-reactive d.c, magnetron sputtering is proposed. The film properties vary markedly with the number of IT layers and the thickness ratio m of the IT layer to the ITO layer. The lowest resistivity of a 100 nm film is 5.8 x 10(-4) Omega cm with IT layers, but 9.8 x 10(-4) Omega cm without IT layers. The transparency of the film is greater than 90% in the visible region.
引用
收藏
页码：131 / 134
页数：4
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