A large dynamic range floating memristor emulator with equal port current restriction

被引:3
|
作者
Pu, Yifei [1 ]
Yu, Bo [2 ]
机构
[1] Sichuan Univ, Coll Comp Sci, Chengdu 610065, Peoples R China
[2] Chengdu Normal Univ, Coll Phys & Engn, Chengdu 611130, Peoples R China
基金
中国国家自然科学基金;
关键词
Floating voltage-controlled linear resistor; fracmem-ristance; fracmemristor; two-port ordinary memristor; three-port mirror memristor;
D O I
10.1109/JAS.2019.1911849
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, a large dynamic range floating memristor emulator (LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor (VCLR) . Since real memristors have not been largely commercialized until now, the application of a LDRFME to memristive systems is reasonable. Motivated by this need, this paper proposes an achievement of a LDRFME based on a feasible transistor model. A first circuit extends the voltage range of the triode region of an ordinary junction field effect transistor (JFET) . The idea is to use this JFET transistor as a tunable linear resistor. A second memristive non-linear circuit is used to drive the resistance of the first JFET transistor. Then those two circuits are connected together and, under certain conditions, the obtained "resistor" presents a hysteretic behavior, which is considered as a memristive effect. The electrical characteristics of a LDRFME are validated by software simulation and real measurement, respectively.
引用
收藏
页码:237 / 243
页数:7
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