GaN-based terahertz sources

被引：6
|
作者：
Litvinov, VI [1 ]
Manasson, VA [1 ]
Sadovnik, LS [1 ]
机构：
[1] WaveBand Corp, Torrance, CA 90501 USA
来源：
TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II | 2000年 / 4111卷
关键词：
terahertz sources; semiconductor superlattices; III-Nitrides;
D O I：
10.1117/12.422138
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We discuss possible new sub-millimeter sources based on group-III Nitrides superlattices. It is shown that travelling dipole domains in biased GaN/InGaN and GaN/AlGaN short-period superlattices can generate electromagnetic power in the terahertz region.
引用
收藏
页码：116 / 123
页数：8
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