Effect of Asymmetric Nonlinearity Dynamics in RRAMs on Spiking Neural Network Performance

被引:0
|
作者
Fouda, Mohammed E. [1 ]
Neftci, E. [2 ]
Eltawil, A. [1 ,3 ]
Kurdahi, E. [1 ]
机构
[1] Univ Calif Irvine, Elect Engn & Comp Sci Dept, Irvine, CA 92697 USA
[2] Univ Calif Irvine, Cognit Sci Dept, Irvine, CA 92697 USA
[3] King Abdullah Univ Sci & Technol, Thuwal, Saudi Arabia
关键词
Spiking Neural Networks; Online Learning; RRAMs; Memristor; Nonidealities; Asymmetric Nonlinearity;
D O I
10.1109/ieeeconf44664.2019.9049043
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Crossbar-based Resistive Random Access Memory (RRAM) array is a promising candidate for fast and efficient implementation of the vector-matrix multiplication, an essential step in a wide variety of workloads. However, several RRAM devices, demonstrating promising synaptic behaviors, are characterized by nonlinear and asymmetric update dynamics, which is a major obstacle for large-scale deployment in neural networks, especially for online learning tasks. In this work, we first introduce a memristive Spiking Neural Network (SNN) with local learning. Then, we study the effect of this asymmetric and nonlinear behavior on the spiking neural network performance and propose a method to overcome the performance degradation without extra nonlinearity cancellation hardware and read cycles. The performance of the proposed method approaches the baseline performance with 1 similar to 2% drop in recognition accuracy.
引用
收藏
页码:495 / 499
页数:5
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