Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors

被引：7
|
作者：
He, L. [1 ]
Ling, Z. Y. [2 ]
Ling, D. X. [1 ]
Wu, M. Y. [1 ]
Zhang, G. [1 ]
Liu, M. X. [1 ]
Zhang, S. Q. [1 ]
机构：
[1] Dongguan Univ Technol, Sch Elect Engn, Dongguan 523808, Peoples R China
[2] S China Univ Technol, Dept Elect Mat Sci & Engn, Coll Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2015年 / 198卷
关键词：
Electrical property; Microstructure; Thermistor; Film thickness; Sol-gel technique; TEMPERATURE; GROWTH; MANGANESE;
D O I：
10.1016/j.mseb.2015.04.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mn(1.85)Co(0.3)Nia(8.5)O(4) (MCN) thin film thermistors with different film thickness (in the range of 400-750 nm) were prepared on Al2O3 substrates by sal-gel technique. The effects of film thickness on the microstructure and electrical properties of the prepared thin film thermistors were investigated by XRD, FESEM, resistance-temperature measurements and Hall measurements. The results showed that MCN thin film thermistors were of good crystallization and compact surface, and the carrier concentration was independent on the thickness. The resistance measured at room temperature was almost linearly decreasing with the increase of thickness. The sensitivity and activation energy increased slightly, then, the aging coefficient decreased sharply with the film thickness increasing. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：20 / 24
页数：5
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