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Method for accelerated determination of GaAsPHEMT power slump reliability

被引：0
|
作者：
Yeats, Bob [1 ]
机构：
[1] Agilent Technol, Santa Rosa, CA 95403 USA
来源：
2007 ROCS WORKSHOP, PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ROCS.2007.4391056
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have overcome difficulties associated with using the Single Device Lifetime Extraction (SDLE) method for analyzing power slump in PHEMTs. This allows rapid on-wafer assessment of power slump. We find that the voltage acceleration factor has the form exp(beta/(Vdg+Vbi)), where beta similar to 200 V is a typical acceleration parameter. We find that Ig is not an accelerator, in that this acceleration factor, which does not explicitly depend on Ig, is accurate over a wide voltage range over which Ig varies by a large factor (e.g., 8). That the acceleration factor in the on-state explicitly depends only on Vdg (and not Ig) has practical utility, since on-state Ig is relatively obscure to the designer.
引用
收藏
页码：3 / 20
页数：18
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