Simulation Analysis of Active Clamping Circuit with Status Feedback for HV-IGBTs

被引：0
|
作者：
Jiang, Ye [1 ]
Lu, Ting [1 ]
Yuan, Liqiang [1 ]
Zhao, Zhengming [1 ]
He, Fanbo [1 ]
机构：
[1] Tsinghua Univ, State Key Lab Power Syst, Dept Elect Engn, Beijing, Peoples R China
来源：
2014 INTERNATIONAL ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC) | 2014年
关键词：
HV-IGBT; series connection; status feedback; voltage balancing; simulation; SERIES CONNECTION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the existing voltage balancing scheme for two series HV-IGBTs (High voltage insulated gate bipolar transistors) with active clamping and status feedback, this paper focuses on the characteristics of IGBT with active clamping circuit. First, the previous series IGBT model is improved according to the experiment results in order to give accurate feedback signal in the active clamping sub-circuit. Then the effect of the load current, the gate drive delay and clamping threshold on feedback signal is studied by simulation. According to the analysis above, the voltage balancing scheme with status feedback is applied to multiple series IGBTs and is proved feasible by simulation.
引用
收藏
页码：1172 / 1176
页数：5
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