Quantum effects in a double-walled carbon nanotube capacitor

被引:18
|
作者
Uchida, Kazuyuki [1 ]
Okada, Susumu
Shiraishi, Kenji
Oshiyama, Atsushi
机构
[1] Univ Tsukuba, Ctr Comp Sci, Inst Phys, Tsukuba, Ibaraki 3058577, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
关键词
D O I
10.1103/PhysRevB.76.155436
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have theoretically investigated the capacitance of a double-walled carbon nanotube (CNT) (4,0)@(24,0) as a nanoscale coaxial-cylindrical capacitor. To calculate the responses of the capacitor to the bias application, we have used a first-principles method based on the density-functional theory with a local-density approximation. We show that the capacitance exhibits two principal quantum effects: First, the capacitance shows a large bias dependence, reflecting the density of states of the CNT electrodes. Second, the capacitance is enhanced according to a quantum-mechanical spill of the stored electron density from the tube walls of the CNTs. We argue that these two quantum effects are fundamental factors in nanoscale capacitors.
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页数:9
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