Electronic growth of metallic overlayers on semiconductor substrates

被引：361
|
作者：
Zhang, ZY
Niu, Q
Shih, CK
机构：
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[2] Univ Texas, Dept Phys, Austin, TX 78712 USA
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 24期
关键词：
D O I：
10.1103/PhysRevLett.80.5381
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a novel "electronic growth" model for metallic thin films on semiconductor substrates. Depending on the competition between the effects of quantum confinement, charge spilling, and interface-induced Friedel oscillations, different types of film stability are defined, as characterized by the existence of critical/magic thicknesses for smooth growth. In particular, smooth growth can be achieved only above a few monolayers for noble metals, and only for the first layer for alkali metals.
引用
收藏
页码：5381 / 5384
页数：4
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